Download original image
The electric field (a) inside and near the rear defective layer (DL) on the epi-Si surface and (b) this field shown in an expanded scale inside the epi-Si layer close to this DL, for the 2.4 μm epi-Si layer cell under AM1.5 light and open-circuit conditions with the defect density at the epi-Si/P-c-Si interface as a parameter.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.