Fig. 4


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Model calculations of the absorption (Abs) in the 2.4 μm epitaxial silicon (epi-Si) layer and the P-type c-Si substrate (black lines with open circles and open triangles respectively) and the external quantum efficiency (EQE – black line with closed circles) of the 2.4 μm cell. Also shown are the calculated values of the absorption in the epi-Si layer (red line with open circles) and the EQE (red line with closed circles) if the epi-Si layer were to be 5 μm thick.

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