Open Access
Tableau 2
Parameters that characterize intrinsic μc-Si:H of different degree of crystallinity (as extracted by modeling). The quantities in brackets marked with asterisks in the column of parameters of μc-Si:H:F correspond to the values extracted by modeling similar μc-Si:H samples (refs TSF, JAP of Rubinelli).
| Parameters | μc-Si:H (A) | μc Si:H (B) | μc-Si:H:F |
| (Fc = 79%) | (Fc = 93%) | (Fc = 100%) | |
|
|
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| Thickness (μm) | 0.77 | 0.84 | 1.50 |
| Mob. gap (Eμ) (eV) | 1.4 | 1.33 | 1.2 (1.25–1.32)* |
| Elec. affinity (eV) | 4.0 | 4.0 | 4.2 |
| Eff. DOS in bands Nc | 2 × 1020 | 2 × 1020 | 2.8 × 1019 (3 × 1019)* |
| (cm-3) Nv | 2 × 1020 | 2 × 1020 | 1.04 × 1019 (3 × 1019)* |
| Charac. En. ED (EA) (m eV) | 20 (10) | 40 (20) | 40 (20) (35 (23))* |
| GD0, GA0 (cm-3eV-1) | 4.0 × 1021 | 4.0 × 1021 | 3.0 × 1020 (2 × 1020)* |
| Elec. (hole) mobility | 32 (8) | 120 (30) | 200 (50) |
| (cm2/V s) | (120–150 (40–75))* | ||
| Gaussian defect den. (cm-3) | 4.0 × 1016 | 8.0 × 1016 | 1.0 × 1015 (2.5−3.75 × 1015)* |
| Gaussian σ charged | 10-15 | 10-15 | 10-16 (6 × 10-14)* |
| Neutral | 10-16 | 10-16 | 10-17 (6 × 10-15)* |
| Tail σ charged | 10-15 | 10-15 | 10-15 (10-15)* |
| Neutral | 10-16 | 10-16 | 10-16 (10-17)* |
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