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Fig. 6


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(a) Sensitivity of the illuminated J-V characteristic to the valence and conduction band tail characteristic energies and (b) the electric field in the device when the band tails are sharp (characteristics energies of band tails ED,EA = 20 me V, 10 m eV respectively, characteristic of μc-Si:H cell type (A) and when they are broader (ED,EA = 40 me V, 20 m eV respectively, characteristic of cell type (B). The electric field over the P/I interface region is plotted on a different scale in the inset.

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