Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates

Open Access

Fig. 2

(Color online) Results of modeling the ellipsometry spectra of the epitaxial films grown from SiF₄-Ar – H₂ mixtures as a function of the hydrogen flow rate, showing (a) the deposition rate and composition of the bulk, the thickness and composition of (b) the interface and (c) surface roughness layers.

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