Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates

Open Access

Fig. 1

(Color online) Imaginary part of the pseudo-dielectric function Im [ε] of different samples: c-Si with native SiO₂, c-Si after native SiO₂ etching, and epitaxial-Si films grown with hydrogen flow rates of 1 sccm and 3 sccm. The inset shows the optical model used to analyze the epitaxial films.

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