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Fig. 1


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(Color online) Imaginary part of the pseudo-dielectric function Im [ε]  of different samples: c-Si with native SiO2, c-Si after native SiO2 etching, and epitaxial-Si films grown with hydrogen flow rates of 1 sccm and 3 sccm. The inset shows the optical model used to analyze the epitaxial films.

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